dc.contributor.author |
Ouyang, X |
en |
dc.contributor.author |
Cao, Peng |
en |
dc.contributor.author |
Huang, Saifang |
en |
dc.contributor.author |
Zhang, WJ |
en |
dc.contributor.author |
Huang, Z |
en |
dc.contributor.author |
Gao, Wei |
en |
dc.date.accessioned |
2016-11-28T20:10:36Z |
en |
dc.date.issued |
2015-07 |
en |
dc.identifier.citation |
Journal of Electronic Materials, 2015, 44 (7), pp. 2243 - 2249 |
en |
dc.identifier.issn |
0361-5235 |
en |
dc.identifier.uri |
http://hdl.handle.net/2292/31165 |
en |
dc.description.abstract |
CaCu3Ti4O12 (CCTO) powders derived from sol–gel precursors were calcined and sintered via microwave radiation. The obtained CCTO powders were compared with that obtained via a conventional heating method. For microwave heating, 89.1 wt.% CCTO was achieved from the sol–gel precursor, after only 17 min at 950°C. In contrast, the conventional calcination method required 3 h to generate 87.6 wt.% CCTO content at 1100°C. In addition, the CCTO powders prepared through 17 min of microwave calcination exhibited a small particle size distribution of D50 = 3.826 μm. It was found that a lengthy hold time of 1 h by microwave sintering is required to obtain a high dielectric constant (3.14 × 103 at 102 Hz) and a reasonably low dielectric loss (0.161) in the sintered CCTO ceramic. Based upon the distinct microstructures, the dielectric responses of the CCTO samples sintered by different methods are attributed to space charge polarization and internal barrier layer capacitor mechanism. |
en |
dc.relation.ispartofseries |
Journal of Electronic Materials |
en |
dc.rights |
Items in ResearchSpace are protected by copyright, with all rights reserved, unless otherwise indicated. Previously published items are made available in accordance with the copyright policy of the publisher. |
en |
dc.rights.uri |
https://researchspace.auckland.ac.nz/docs/uoa-docs/rights.htm |
en |
dc.title |
Microwave-assisted synthesis of high dielectric constant CaCu3Ti4O12 from sol-gel precursor |
en |
dc.type |
Journal Article |
en |
dc.identifier.doi |
10.1007/s11664-015-3680-1 |
en |
pubs.issue |
7 |
en |
pubs.begin-page |
2243 |
en |
pubs.volume |
44 |
en |
pubs.author-url |
http://link.springer.com/article/10.1007/s11664-015-3680-1 |
en |
pubs.end-page |
2249 |
en |
dc.rights.accessrights |
http://purl.org/eprint/accessRights/RestrictedAccess |
en |
pubs.subtype |
Article |
en |
pubs.elements-id |
488501 |
en |
pubs.org-id |
Engineering |
en |
pubs.org-id |
Chemical and Materials Eng |
en |
dc.identifier.eissn |
1543-186X |
en |
pubs.record-created-at-source-date |
2016-04-29 |
en |