Structural and electronic properties of thermally evaporated V2O5 epitaxial thin films

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dc.contributor.author Lamoureux, B en
dc.contributor.author Singh, VR en
dc.contributor.author Jovic, Vedran en
dc.contributor.author Kuyyalil, J en
dc.contributor.author Su, T-Y en
dc.contributor.author Smith, Kevin en
dc.date.accessioned 2017-07-20T04:41:35Z en
dc.date.issued 2016-09 en
dc.identifier.citation Thin Solid Films 615:409-414 Sep 2016 en
dc.identifier.issn 0040-6090 en
dc.identifier.uri http://hdl.handle.net/2292/34391 en
dc.description.abstract This study investigated the physicochemical properties of a V2O5 thin film deposited on c-plane sapphire through thermal evaporation at a relatively high pressure. Using atomic force microscopy (AFM), X-ray diffraction (XRD) and a suite of X-ray spectroscopic techniques, it was shown that a high quality epitaxial V2O5 thin film was achieved. AFM step height analysis demonstrated that the film thickness was ~ 50 nm with a surface roughness of 1.5 Å, as determined by root mean square roughness measurements. XRD analysis verified that the film was highly crystalline with a (0001) orientation on the substrate. Vanadium was predominantly in the 5 + oxidation state, with contributions from V4 + states at the surface, shown by X-ray photoemission spectroscopy analysis X-ray absorption spectroscopy further confirmed the predominant presence of V5 + in an octahedral crystal field. The existence with bulk V4 + states was shown through V L-edge X-ray emission spectroscopy which demonstrated the presence of d-d crystal field transitions in an otherwise d0 transition metal oxide. The data suggests that by increasing the partial pressure of oxygen in the vacuum chamber during growth, thermal evaporation can be used as a cheap and efficient way of growing stoichiometric V2O5 thin films. en
dc.publisher Elsevier en
dc.relation.ispartofseries Thin Solid Films en
dc.rights Items in ResearchSpace are protected by copyright, with all rights reserved, unless otherwise indicated. Previously published items are made available in accordance with the copyright policy of the publisher. en
dc.rights.uri https://researchspace.auckland.ac.nz/docs/uoa-docs/rights.htm en
dc.title Structural and electronic properties of thermally evaporated V2O5 epitaxial thin films en
dc.type Journal Article en
dc.identifier.doi 10.1016/j.tsf.2016.07.062 en
pubs.begin-page 409 en
pubs.volume 615 en
dc.rights.holder Copyright: The author en
pubs.end-page 414 en
pubs.publication-status Published en
dc.rights.accessrights http://purl.org/eprint/accessRights/RestrictedAccess en
pubs.subtype Article en
pubs.elements-id 540002 en
pubs.record-created-at-source-date 2017-07-20 en


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