EPROM cell with a magnesium electronic injector

Kong, Sik On; Kwok, Chee Yee; Wong, Sai Peng

EPROM cell with a magnesium electronic injector

Kong, Sik On ; Kwok, Chee Yee ; Wong, Sai Peng

Identifier: http://hdl.handle.net/2292/4368

Issue Date: 1995

Reference: Proceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95, Hong Kong, Hong Kong, 456-459. (1995)

Rights: Copyright IEEE

Rights (URI): https://researchspace.auckland.ac.nz/docs/uoa-docs/rights.htm

Abstract:

By using Mg as the tunnelling electrode for an EPROM cell, it is shown in a control experiment that the tunnelling current is much enhanced while the tunnelling field is much reduced after a sintering procedure in which Mg reacts with the SiO2 dielectric. Potentially, this may lead to faster programming, lower programming voltages and better programming endurance. An experimental EPROM cell has been made and has demonstrated programmability