Abstract:
In this paper, a new open source floating-gate MOSFET (FGMOSFET) device-level micro-model to facilitate accurate analog circuit design is presented. The floating gate is charged by the Fowler–Nordheim tunneling effect. The equations representing the new device model were explored and verified on MATLAB. Subsequently, Verilog-A script was employed to combine the equations and build the complete device model. The new FGMOSFET circuit model was plugged-in as a pop-up menu component in a standard 130 nm CMOS technology design library. Thus, it can be instanced directly on a schematic editor palette for analog circuit simulation and design in a similar fashion as the standard MOSFET devices.
