Effect of template deposition method on formation of aunps in memory devices application

Abstract

© 2019 Trans Tech Publications Ltd, Switzerland. AuNPs were prepared by using a sacrificial hydrothermal method on Aluminum (Al) /(polymethylsilsesquioxane) PMSSQ / (Silicon) Si substrate. The Al layer was the sacrificial template dissolved in precursor during hydrothermal reaction. The effect of deposition method for Al template on AuNP formation was investigated. Two deposition methods (sputtering and thermal evaporation) of Al template were varied for preparing template. The properties of formed AuNPs were studied using field-emission scanning electron microscopy and X-ray diffractometer. PMSSQ was spin-coated on the produced AuNPs in order to investigate the memory properties, which were then characterized by using a semiconductor characterization system. The sample grown hydrothermally on sputtered Al template exhibited excellent memory properties with the lowest turn “ON” voltage at 2.4 V in I-V characteristics and 34 charges were stored per AuNP in C-V measurement. Therefore, isolate and uniform of AuNPs distribution are crucial for excellent memory properties of devices.