Interface Localization in Thin Films

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dc.contributor.advisor Grimson, Malcolm J. en Jang, Hyunbum en 2007-06-29T03:17:25Z en 2007-06-29T03:17:25Z en 1999 en
dc.identifier THESIS 99-413 en
dc.identifier.citation Thesis (PhD--Physics)--University of Auckland, 1999 en
dc.identifier.uri en
dc.description Full text is available to authenticated members of The University of Auckland only. en
dc.description.abstract Monte Carlo simulations have been performed for different types of thin films under the action of competing surface fields with the same magnitude but opposite direction. For thin ferromagnetic Heisenberg films, a single-site anisotropy λ, and an exchange anisotropy Λ were used in the model Hamiltonians. In the Ising limit of each model λ → ∞and Λ → 1, the interface localization tansition first seen in the thin ferromagnetic Ising film with competing surface fields can also be observed in the thin ferromagnetic Heisenberg films. A non-zero magnetization of the film is observed below a critical temperature Tc that can be associated with a localization of the interface between regions of positive and negative magnetization near the film surface. A degeneracy in the magnetization profiles exists between states of positive and negative total magnetization at low temperatures. Whereas, in the Heisenberg limit of the models, λ → 0 and Λ → 0, no spontaneous magnetization of the film is observed and the magnetization profile across the film is antisymmetric, slowly varying from positive magnetization on one surface to negative on the other. For thin Ising films with competing surface fields and a bulk transverse field Ω, an interface localization transition with an associated spontaneous magnetization of the film is also observed below Tc. However in the limit of Ω → ∞, no spontaneous magnetization of the film is observed. Monte Carlo simulations have been extended to study the phase behavior of thin uniaxial liquid crystal films with competing surface fields. The model Hamiltonian is a combination of the Lebwohl-Lasher model and the anisotropic Heisenberg model with a ferromagnetic exchange anisotropy Λ. The interface localization transition observed with the competing surface fields is substantially influenced by the size of the nematic coupling constant ε and the ferromagnetic exchange anisotropy Λ. en
dc.language.iso en en
dc.publisher ResearchSpace@Auckland en
dc.relation.ispartof PhD Thesis - University of Auckland en
dc.relation.isreferencedby UoA9988421814002091 en
dc.rights Items in ResearchSpace are protected by copyright, with all rights reserved, unless otherwise indicated. en
dc.rights Restricted Item. Available to authenticated members of The University of Auckland. en
dc.rights.uri en
dc.title Interface Localization in Thin Films en
dc.type Thesis en Physics en The University of Auckland en Doctoral en PhD en
dc.rights.holder Copyright: The author en

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